1. 毕业设计（论文）的内容和要求
目前，拓扑绝缘体与磁性的结合是热点研究课题，理论表明在磁性拓扑绝缘体中可以实现众多奇异的拓扑量子现象，如无需施加外磁场，就可以实现具有一维无耗散边缘导电通道的量子反常霍尔效应。
不同于以往的材料依靠磁性元素掺杂引入磁性，MnBi2Te4的磁性来源于材料自身结构内部的Mn原子，这是一种具有本征磁性的拓扑绝缘体材料，无需引入额外的掺杂。
遗憾的是，在实验中，MnBi2Te4中的QAHE只有在较高磁场条件下才能被观察到。
2. 参考文献
1.Klitzing, K.v., G. Dorda, and M. Pepper, New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance. Physical Review Letters, 1980. 45(6): p. 494-497.2. Thouless, D.J., et al., Quantized Hall Conductance in a Two-Dimensional Periodic Potential. Physical Review Letters, 1982. 49(6): p. 405-408.3. K鰊ig, M., et al., Quantum Spin Hall Insulator State in HgTe Quantum Wells. Science, 2007. 318: p. 766-770.4. Zhang, Y., et al., Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature, 2005. 438(7065): p. 201-204.5. Chang, C.-Z., et al., Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator. Science, 2013. 340: p. 167-170.6. Yu, R., et al., Quantized Anomalous Hall Effect in Magnetic Topological Insulators. 2010. 329(5987): p. 61-64.7. Xu, Y., I. Miotkowski, and Y.P. Chen, Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators. Nature Communications, 2016. 7(1): p. 11434.8. Yoshimi, R., et al., Quantum Hall effect on top and bottom surface states of topological insulator (Bi1xSbx)2Te3 films. Nature Communications, 2015. 6(1): p. 6627.9. Xie, F., et al., Phase transition and anomalous scaling in the quantum Hall transport of topological-insulator Sn-Bi1.1Sb0.9Te2S devices. Physical Review B, 2019. 99(8): p. 081113.10. Zhang, S., et al., Anomalous quantization trajectory and parity anomaly in Co cluster decorated BiSbTeSe2 nanodevices. Nature Communications, 2017. 8(1): p. 977.11. Xiao, D., M.-C. Chang, and Q. Niu, Berry phase effects on electronic properties. Reviews of Modern Physics, 2010. 82(3): p. 1959-2007.12. Liu, C.-X., S.-C. Zhang, and X.-L. Qi, The Quantum Anomalous Hall Effect: Theory and Experiment. Annual Review of Condensed Matter Physics, 2016. 7(1): p. 301-321.13. He, K., Y. Wang, and Q.-K. Xue, Topological Materials: Quantum Anomalous Hall System. Annual Review of Condensed Matter Physics, 2018. 9(1): p. 329-344.14. Fei, F., et al., The Material Efforts for Quantized Hall Devices Based on Topological Insulators. Advanced Materials, 2019. n/a(n/a): p. 1904593.15. Tokura, Y., K. Yasuda, and A. Tsukazaki, Magnetic topological insulators. Nature Reviews Physics, 2019. 1(2): p. 126-143.
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